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this is information on a product in full production. april 2014 docid026168 rev 1 1/18 STB120N10F4, stp120n10f4 n-channel 100 v, 8 m typ., 120 a, stripfet? deepgate? power mosfets in d 2 pak and to-220 packages datasheet ? production data figure 1. internal schematic diagram features ? n-channel enhancement mode ? very low on-resistance ? low gate charge ? 100% avalanche rated applications ? switching applications description these devices are n-channel power mosfets developed using st?s stripfet? deepgate? technology. the devices have a new gate structure and are specially designed to minimize on-state resistance to provide superior switching performance. to-220 1 2 3 tab 1 3 tab d pak 2 $0y '7$% * 6 order codes v ds r ds(on) max. i d STB120N10F4 100 v 10 m 120 a stp120n10f4 table 1. device summary order codes marking packages packaging STB120N10F4 120n10f4 d 2 pak tape and reel stp120n10f4 to-220 tube www.st.com
contents STB120N10F4, stp120n10f4 2/18 docid026168 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.1 d2pak, STB120N10F4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.2 to-220, stp120n10f4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
docid026168 rev 1 3/18 STB120N10F4, stp120n10f4 electrical ratings 18 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 100 v v gs gate-source voltage 20 v i d drain current (continuous) at t c = 25 c 120 a i d drain current (continuous) at t c = 100 c 85 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 390 a p tot total dissipation at t c = 25 c 300 w derating factor 2 w/c e as (2) 2. starting t j = 25 c, i d = 65 a, v dd = 50 v single pulse avalanche energy 215 mj t stg storage temperature ? 55 to 175 c t j max. operating junction temperature table 3. thermal data symbol parameter value unit d 2 pak to-220 r thj-case thermal resistance junction-case max 0.5 c/w r thj-pcb thermal resistance junction-pcb max 35 c/w r thj-amb thermal resistance junction-ambient max 62.5 c/w
electrical characteristics STB120N10F4, stp120n10f4 4/18 docid026168 rev 1 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 100 v i dss zero gate voltage drain current (v gs = 0) v ds = 100 v 1 a v ds = 100 v,t c =125 c 100 a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a2 4v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 60 a 8 10 m table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 25 v, f = 1 mhz, v gs = 0 - 7290 - pf c oss output capacitance - 568 - pf c rss reverse transfer capacitance - 387 - pf q g total gate charge v dd = 50 v, i d = 120 a, v gs = 10 v (see figure 14) - 131 - nc q gs gate-source charge - 40 - nc q gd gate-drain charge - 37 - nc table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 50 v, i d = 60 a r g =4.7 v gs = 10 v (see figure 13) -32-ns t r rise time - 116 - ns t d(off) turn-off-delay time v dd = 50 v, i d = 60 a, r g =4.7 , v gs = 10 v (see figure 13) - 111 - ns t f fall time - 79 - ns
docid026168 rev 1 5/18 STB120N10F4, stp120n10f4 electrical characteristics 18 table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 120 a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) - 390 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 60 a, v gs = 0 - 1.2 v t rr reverse recovery time i sd = 120 a, v dd = 80 v di/dt = 100 a/ s, t j = 150 c (see figure 15) -72 ns q rr reverse recovery charge - 215 nc i rrm reverse recovery current - 6 a
electrical characteristics STB120N10F4, stp120n10f4 6/18 docid026168 rev 1 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance , ' 9 '6 9 $ 2shudwlrqlqwklvduhdlv /lplwhge\pd[5 '6rq pv pv 7m ?& 7f ?& 6lqojh sxovh pv $0y figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance , ' 9 '6 9 $ 9 9 9 *6 9 9 9 $0y , ' 9 *6 9 $ 9 '6 9 $0y 9 *6 4 j q& 9 9 '' 9 , ' $ $0y 5 '6rq , ' $ p2kp 9 *6 9 $0y
docid026168 rev 1 7/18 STB120N10F4, stp120n10f4 electrical characteristics 18 figure 8. capacitance variations figure 9. source-drain diode forward characteristics figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. normalized v (br)dss vs temperature & 9 '6 9 s) &lvv &rvv &uvv $0y v sd 0 40 i sd (a) (v) 20 100 60 80 0.5 0.6 0.7 0.8 0.9 1 t j =-50c t j =150c t j =25c am15511v1 v gs(th) 0.8 0.6 0.4 0.2 -75 -25 t j (c) (norm) 1 75 25 1.2 125 i d =250 a am15508v1 r ds(on) 2 1 0 t j (c) (norm) 0.5 1.5 2.5 -75 -25 75 25 125 v gs =10 v i d =60 a am15509v1 v (br)dss t j (c) (norm) 0.85 0.9 0.95 1 1.05 1.1 1.15 -75 -25 75 25 125 i d =250 a am15510v1
test circuits STB120N10F4, stp120n10f4 8/18 docid026168 rev 1 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform figure 18. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
docid026168 rev 1 9/18 STB120N10F4, stp120n10f4 package mechanical data 18 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STB120N10F4, stp120n10f4 10/18 docid026168 rev 1 4.1 d 2 pak, STB120N10F4 figure 19. d2pak (to-263) drawing 0079457_t
docid026168 rev 1 11/18 STB120N10F4, stp120n10f4 package mechanical data 18 table 8. d2pak (to-263) mechanical data dim. mm min. typ. max. a 4.40 4.60 a1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 d 8.95 9.35 d1 7.50 e10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h15 15.85 j1 2.49 2.69 l 2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8
package mechanical data STB120N10F4, stp120n10f4 12/18 docid026168 rev 1 figure 20. d2pak footprint (a) a. all dimension are in millimeters 16.90 12.20 9.75 3.50 5.08 1.60 footprint
docid026168 rev 1 13/18 STB120N10F4, stp120n10f4 package mechanical data 18 4.2 to-220, stp120n10f4 figure 21. to-220 type a drawing bw\sh$b5hyb7
package mechanical data STB120N10F4, stp120n10f4 14/18 docid026168 rev 1 table 9. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
docid026168 rev 1 15/18 STB120N10F4, stp120n10f4 packaging mechanical data 18 5 packaging mechanical data figure 22. tape p1 a0 d1 p0 f w e d b0 k0 t user direction of feed p2 10 pitches cumulative tolerance on tape +/- 0.2 mm user direction of feed r bending radius top cover tape am08852v2
packaging mechanical data STB120N10F4, stp120n10f4 16/18 docid026168 rev 1 figure 23. reel table 10. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t0.25 0.35 w23.7 24.3 a d b full radius g measured at hub c n reel dimensions 40mm min. access hole at slot location t tape slot in core for tape start 25 mm min. width am08851v2
docid026168 rev 1 17/18 STB120N10F4, stp120n10f4 revision history 18 6 revision history table 11. document revision history date revision changes 02-apr-2014 1 first release.
STB120N10F4, stp120n10f4 18/18 docid026168 rev 1 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2014 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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